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Semiconductor Devices: Physics AndTechnology
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ISBN
:
9788126516810
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Publisher
:
Wiley India Pvt Ltd
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Subject
:
Science: General Issues
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Binding
:
paperback
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Pages
:
572
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Year
:
2008
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619.0
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Description
This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
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Author Biography
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of the nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his fundamental and pioneering contributions... He received his PhD in solid-state electronic from Stanford University in 1963. Table of Contents Preface Introduction Part I: Semiconductor Physics Module Energy Bands and Carrier Concentration in Thermal Equilibrium Module Carrier Transport Phenomena Part II: Semiconductor Devices Module p-n Junction Module Bipolar Transistor and Related Devices Module MOSFET and Related Devices Module MESFET and Related Devices Module Microwave Diodes, Quantum-Effect, and Hot-Electron Devices Module Photonic Devices Part III Semiconductor Technology Module Crystal Growth and Epitaxy Module Film Formation Module Lithography and Etching Module Impurity Doping Module Integrated Devices Appendix A: List of Symbols Appendix B: International Systems of Units (SI Units) Appendix C: Unit Prefixes Appendix D: Greek Alphabet Appendix E: Physical Constants Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K Appendix G: Properties of Si and Gaas at 300 K Appendix H: Derivation of the Density of States in Semiconductor Appendix I: Derivation of Recombination Rate for Indirect Recombination Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode Appendix K: Basic Kinetic Theory of Gases Appendix L: Answers to Selected Problems Index
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